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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package High collector breakdown voltage : VCEO=400V(Min) Excellent switching time : tr=1.0|I s(Max.) : tf=1.0|I s(Max. APPLICATIONS High speed high voltage switching applications Switching regulator applications High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION 2SC2535 Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB IN Emitter PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current CHA E SEM NG Open base OND IC CONDITIONS TOR UC VALUE 500 400 6 5 1 UNIT V V V A A Open emitter Open collector Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.5 W 40 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=400V ;IE=0 VEB=6V; IC=0 IC=3A ; VCE=5V 10 MIN 400 500 TYP. 2SC2535 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE MAX UNIT V V 1.0 1.5 100 1 |I V V A mA Switching times tr tstg tf Rise time Fall time Storage time INC E SEM ANG H VCC=200V; IB1=-IB2=0.3A;RL=68| Duty cycleU 1% OND IC TOR UC 1.0 |I |I |I 2.5 1.0 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2535 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2535 CHA IN E SEM NG OND IC TOR UC 4 |
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